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2STX1360
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Features

VERY LOW COLLECTOR-EMITTER SATUARATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED IN COMPLANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE
Applications

EMERGENCY LIGHTING LED CCFL DRIVERS (BACK LIGHTING) VOLTAGE REGULATION RELAY DRIVER
TO-92
Internal Schematic Diagram
Description
The 2STX1360 is a NPN transistor manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Order Codes
Part Number 2STX1360 Marking X1360 Package TO-92 Packing Bulk
November 2005
rev.1 1/10
www.st.com 10
1 Absolute Maximum Ratings
2STX1360
1
Table 1.
Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT Tstg TJ
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter Collector-Base Voltage (IE = 0) (IC = 0) Value 80 60 6 3 5 0.2 0.4 1 -65 to 150 150 Unit V V V A A A A W C C
Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25C Storage Temperature Max. Operating Junction Temperature
Table 2.
Symbol RthJ-case RthJ-amb
Thermal Data
Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max Value 44.6 125 Unit C/W C/W
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2STX1360
2 Electrical Characteristics
2
Table 3.
Symbol ICBO IEBO VBE VCE(sat) Note: 1 VBE(sat) Note: 1 hFE Note: 1 td tr ts tf fT
Electrical Characteristics
Electrical Characteristics (TCASE = 25C; unless otherwise specified)
Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Base-Emitter Voltage Collector-Emitter Saturation Voltage Test Conditions VCB = 80 V VEB = 6 V VCE = 2 V IC = 2 A __ _ IC = 3 A IC = 100 mA IB = 100 mA IB = 100 mA VCE = 2 V VCE = 2 V IC = 3 A 80 160 __ _ IB = 150 mA 630 670 150 210 0.89 Min. Typ. Max. 100 100 730 300 500 1.2 Unit nA nA mV mV mV V
Base-Emitter Saturation Voltage IC = 2 A __ _ IC = 100 mA _ IC = 1 A _ VCC = 10 V (see figure 8)
DC Current Gain RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Transition Frequency
280 17 81 620 54 130
400 20 100 720 65 ns ns ns ns MHz
IB1 = - IB2 = 300 mA
IC = 0.1 A ___
VCE = 10 V
Note: 1 Pulsed duration = 300 s, duty cycle 1.5%.
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2 Electrical Characteristics
2STX1360
2.1
Typical Characteristics
DC Current Gain Figure 2. DC Current Gain
Figure 1.
Figure 3.
Collector Emitter Saturation Voltage Figure 4.
Base Emitter Saturation Voltage
Figure 5.
Resistive Load Switching Times
Figure 6.
Resistive LoadSwitching Times
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2STX1360
Figure 7. Reverse Bised SOA
2 Electrical Characteristics
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3 Test Circuits
2STX1360
3
Figure 8.
Test Circuits
Resistive Load Switching Test Circuit
1) Fast electronic switch 2) Non-inductive Resisitor
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2STX1360
4 Package Mechanical Data
4
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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4 Package Mechanical Data
2STX1360
TO-92 BULK SHIPMENT MECHANICAL DATA
DIM.
mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5
O
TYP
MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56
A b D E e e1 L R S1 W V
0102782 C
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2STX1360
5 Revision History
5
Revision History
Date 17-Nov-2005 Revision 1 Initial Release Changes
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5 Revision History
2STX1360
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is gr by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are s to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products a authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Jap Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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